Our research highlighted at PNAS Journal Club
Steven Schofield
``First-of-its-kind image may suggest new ways to use silicon defects in quantum devices.’’ We are delighted that PNAS Journal Club has written about our latest publication, highlighting the significance of our work on imaging acceptor wave functions in silicon.
The article provides a clear and accessible discussion of how our experimental approach reveals new insight into optically active defects. This feature is an exciting recognition of our group’s efforts to combine atomic-resolution scanning tunnelling microscopy with theoretical modelling. It underscores the potential of engineered defects as building blocks for future quantum technologies.
- You can read the PNAS article on the PNAS Journal Club website.
- You can read the full research paper at Nano Letters.
