Publications

The group’s research spans both fundamental and applied aspects of nanoscience and quantum materials. Below is our full list of publications, with links to journal articles and preprints where available.

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2025

Future of Condensed Matter Physics for the Next 10 Years

Jonathan P Bird, Jinguang Cheng, Chun-gang Duan, Thomas Frederiksen, Gerhard Kahl, …, Steven R Schofield, Krishnendu Sengupta, Xiaoshan Xu, Jin Zhao, Peter A Dowben

Journal of Physics: Condensed Matter  ·  25 Sep 2025  ·  doi:10.1088/1361-648X/ae0be1

Imaging the Acceptor Wave Function Anisotropy in Silicon

Manuel Siegl, Julian Zanon, Joseph Sink, Adonai Rodrigues da Cruz, Holly Hedgeland, Neil J. Curson, Michael E. Flatté, Steven R. Schofield

Nano Letters  ·  21 Aug 2025  ·  doi:10.1021/acs.nanolett.5c02675

This paper presents the first STM imaging and spectroscopy of hydrogenic acceptor wave functions in silicon, with effective-mass and tight-binding theory confirming their square-ring-like symmetry and acceptor character.

Roadmap on atomic-scale semiconductor devices

Steven R Schofield, Andrew J Fisher, Eran Ginossar, Joseph W Lyding, Richard Silver, …, Ezra Bussmann, Quinn Campbell, Xujiao Gao, Tzu-Ming Lu, Scott W Schmucker

Nano Futures  ·  31 Mar 2025  ·  doi:10.1088/2399-1984/ada901

This roadmap reviews 25 years of progress since Kane’s proposal for donor-based qubits in silicon, charting advances, challenges, and future directions in atomic-scale semiconductor quantum technologies.

2024

Single‐Atom Control of Arsenic Incorporation in Silicon for High‐Yield Artificial Lattice Fabrication

Taylor J. Z. Stock, Oliver Warschkow, Procopios C. Constantinou, David R. Bowler, Steven R. Schofield, Neil J. Curson

Advanced Materials  ·  22 Mar 2024  ·  doi:10.1002/adma.202312282

This work demonstrates deterministic placement of single arsenic dopants in silicon with 97 ± 2% yield, advancing the scalable assembly of atomically precise quantum devices.

EUV-induced hydrogen desorption as a step towards large-scale silicon quantum device patterning

Procopios Constantinou, Taylor J. Z. Stock, Li-Ting Tseng, Dimitrios Kazazis, Matthias Muntwiler, Carlos A. F. Vaz, Yasin Ekinci, Gabriel Aeppli, Neil J. Curson, Steven R. Schofield

Nature Communications  ·  24 Jan 2024  ·  doi:10.1038/s41467-024-44790-6

This work demonstrates resist-free EUV-induced hydrogen desorption on Si(001):H, bridging atomic-precision STM lithography with scalable semiconductor manufacturing techniques.

2023

Adsorption and Thermal Decomposition of Triphenyl Bismuth on Silicon (001)

Eric A. S. Lundgren, Carly Byron, Procopios Constantinou, Taylor J. Z. Stock, Neil J. Curson, Lars Thomsen, Oliver Warschkow, Andrew V. Teplyakov, Steven R. Schofield

The Journal of Physical Chemistry C  ·  14 Aug 2023  ·  doi:10.1021/acs.jpcc.3c03916

Momentum‐Space Imaging of Ultra‐Thin Electron Liquids in δ‐Doped Silicon

Procopios Constantinou, Taylor J. Z. Stock, Eleanor Crane, Alexander Kölker, Marcel van Loon, …, Andrew J. Fisher, Vladimir N. Strocov, Gabriel Aeppli, Neil J. Curson, Steven R. Schofield

Advanced Science  ·  19 Jul 2023  ·  doi:10.1002/advs.202302101

This study demonstrates, for the first time, a non-destructive method to probe two-dimensional electron liquids in silicon, revealing their properties—including quantum confinement thickness—and showcasing the thinnest technological electron liquid to date (0.45 nm).

Resistless EUV lithography: Photon-induced oxide patterning on silicon

Li-Ting Tseng, Prajith Karadan, Dimitrios Kazazis, Procopios C. Constantinou, Taylor J. Z. Stock, Neil J. Curson, Steven R. Schofield, Matthias Muntwiler, Gabriel Aeppli, Yasin Ekinci

Science Advances  ·  21 Apr 2023  ·  doi:10.1126/sciadv.adf5997

Bismuth trichloride as a molecular precursor for silicon doping

Eric A. S. Lundgren, Rebecca Conybeare, Taylor J. Z. Stock, Neil J. Curson, Oliver Warschkow, Steven R. Schofield

Applied Physics Letters  ·  10 Apr 2023  ·  doi:10.1063/5.0145772

Room Temperature Incorporation of Arsenic Atoms into the Germanium (001) Surface**

Emily V. S. Hofmann, Taylor J. Z. Stock, Oliver Warschkow, Rebecca Conybeare, Neil J. Curson, Steven R. Schofield

Angewandte Chemie International Edition  ·  10 Jan 2023  ·  doi:10.1002/anie.202213982

This paper reports that arsenic incorporates into Ge(001) at room temperature, addressing a key challenge for scalable donor-based quantum devices.

2022

Atomic and molecular functionalisation of technological materials: an introduction to nanoscale processes on semiconductor surfaces

Steven R Schofield, Andrew V Teplyakov, Talat S Rahman

Journal of Physics: Condensed Matter  ·  25 Mar 2022  ·  doi:10.1088/1361-648X/ac5a24

2021

Substitutional Tin Acceptor States in Black Phosphorus

Mark Wentink, Julian Gaberle, Martik Aghajanian, Arash A. Mostofi, Neil J. Curson, Johannes Lischner, Steven R. Schofield, Alexander L. Shluger, Anthony J. Kenyon

The Journal of Physical Chemistry C  ·  11 Oct 2021  ·  doi:10.1021/acs.jpcc.1c07115

Charge Density Waves in Electron-Doped Molybdenum Disulfide

Mohammed K. Bin Subhan, Asif Suleman, Gareth Moore, Peter Phu, Moritz Hoesch, Hidekazu Kurebayashi, Christopher A. Howard, Steven R. Schofield

Nano Letters  ·  06 Jul 2021  ·  doi:10.1021/acs.nanolett.1c00677

This paper reports the first observation of a charge density wave ground state in a semiconducting transition metal dichalcogenide, providing new insight into CDW formation mechanisms.

Determination of the preferred reaction pathway of acetophenone on Si(001) using photoelectron diffraction

Paula L Lalaguna, Holly Hedgeland, Paul T P Ryan, Oliver Warschkow, Matthias K Muntwiler, Andrew V Teplyakov, Steven R Schofield, David A Duncan

Journal of Physics: Condensed Matter  ·  04 May 2021  ·  doi:10.1088/1361-648X/abe6dd

2020

Atomic-Scale Patterning of Arsenic in Silicon by Scanning Tunneling Microscopy

Taylor J. Z. Stock, Oliver Warschkow, Procopios C. Constantinou, Juerong Li, Sarah Fearn, …, Emily V. S. Hofmann, Alexander Kölker, David R. McKenzie, Steven R. Schofield, Neil J. Curson

ACS Nano  ·  06 Mar 2020  ·  doi:10.1021/acsnano.9b08943

2019

Dissociation of CH₃–O as a Driving Force for Methoxyacetophenone Adsorption on Si(001)

Kane M. O’Donnell, Carly Byron, Gareth Moore, Lars Thomsen, Oliver Warschkow, Andrew Teplyakov, Steven R. Schofield

The Journal of Physical Chemistry C  ·  19 Aug 2019  ·  doi:10.1021/acs.jpcc.9b04954

2018

Two- to three-dimensional crossover in a dense electron liquid in silicon

Guy Matmon, Eran Ginossar, Byron J. Villis, Alex Kölker, Tingbin Lim, …, Neil J. Curson, Juerong Li, Ben N. Murdin, Andrew J. Fisher, Gabriel Aeppli

Physical Review B  ·  23 Apr 2018  ·  doi:10.1103/PhysRevB.97.155306

Higher order reconstructions of the Ge(001) surface induced by a Ba layer

W. Koczorowski, T. Grzela, A. Puchalska, M.W. Radny, L. Jurczyszyn, S.R. Schofield, R. Czajka, N.J. Curson

Applied Surface Science  ·  01 Mar 2018  ·  doi:10.1016/j.apsusc.2017.11.058

2017

Nondestructive imaging of atomically thin nanostructures buried in silicon

Georg Gramse, Alexander Kölker, Tingbin Lim, Taylor J. Z. Stock, Hari Solanki, Steven R. Schofield, Enrico Brinciotti, Gabriel Aeppli, Ferry Kienberger, Neil J. Curson

Science Advances  ·  02 Jun 2017  ·  doi:10.1126/sciadv.1602586

Exact location of dopants below the Si(001):H surface from scanning tunneling microscopy and density functional theory

Veronika Brázdová, David R. Bowler, Kitiphat Sinthiptharakoon, Philipp Studer, Adam Rahnejat, Neil J. Curson, Steven R. Schofield, Andrew J. Fisher

Physical Review B  ·  07 Feb 2017  ·  doi:10.1103/PhysRevB.95.075408

2016

Adsorption and Dissociation of a Bicyclic Tertiary Diamine, Triethylenediamine, on a Si(100)-2 × 1 Surface

Jing Zhao, Mark R. Madachik, Kane M. O’Donnell, Gareth Moore, L. Thomsen, Oliver Warschkow, Steven R. Schofield, Andrew Teplyakov

The Journal of Physical Chemistry C  ·  07 Dec 2016  ·  doi:10.1021/acs.jpcc.6b10485

STM and DFT study on formation and characterization of Ba-incorporated phases on a Ge(001) surface

W. Koczorowski, A. Puchalska, T. Grzela, L. Jurczyszyn, S. R. Schofield, R. Czajka, N. J. Curson, M. W. Radny

Physical Review B  ·  09 May 2016  ·  doi:10.1103/PhysRevB.93.195304

Reaction paths of phosphine dissociation on silicon (001)

O. Warschkow, N. J. Curson, S. R. Schofield, N. A. Marks, H. F. Wilson, M. W. Radny, P. V. Smith, T. C. G. Reusch, D. R. McKenzie, M. Y. Simmons

The Journal of Chemical Physics  ·  07 Jan 2016  ·  doi:10.1063/1.4939124

Orientation and stability of a bi-functional aromatic organic molecular adsorbate on silicon

K. M. O’Donnell, H. Hedgeland, G. Moore, A. Suleman, M. Siegl, L. Thomsen, O. Warschkow, S. R. Schofield

Physical Chemistry Chemical Physics  ·  01 Jan 2016  ·  doi:10.1039/c6cp04328c

2015

Initial growth of Ba onGe(001): An STM and DFT study

W. Koczorowski, A. Puchalska, T. Grzela, M. W. Radny, L. Jurczyszyn, S. R. Schofield, R. Czajka, N. J. Curson

Physical Review B  ·  29 Jun 2015  ·  doi:10.1103/PhysRevB.91.235319

Water-Induced, Spin-Dependent Defects on the Silicon (001) Surface

Phillip V. Smith, Daniel R. Belcher, Marian W. Radny, Leszek Jurczyszyn, Steven R. Schofield, Oliver Warschkow

The Journal of Physical Chemistry C  ·  13 May 2015  ·  doi:10.1021/acs.jpcc.5b01493

Ba termination of Ge(001) studied with STM

W Koczorowski, T Grzela, M W Radny, S R Schofield, G Capellini, R Czajka, T Schroeder, N J Curson

Nanotechnology  ·  23 Mar 2015  ·  doi:10.1088/0957-4484/26/15/155701

Single dopants in semiconductors

Steven R Schofield, Sven Rogge

Journal of Physics: Condensed Matter  ·  18 Mar 2015  ·  doi:10.1088/0953-8984/27/15/150301

2014

Organic molecules on inorganic surfaces

Steven R Schofield, Veronika Brázdová

Journal of Physics: Condensed Matter  ·  21 Nov 2014  ·  doi:10.1088/0953-8984/27/5/050301

Manipulating the orientation of an organic adsorbate on silicon: a NEXAFS study of acetophenone on Si(0 0 1)

Kane M O’Donnell, Oliver Warschkow, Asif Suleman, Adam Fahy, Lars Thomsen, Steven R Schofield

Journal of Physics: Condensed Matter  ·  21 Nov 2014  ·  doi:10.1088/0953-8984/27/5/054002

Imaging of buried phosphorus nanostructures in silicon using scanning tunneling microscopy

Lars Oberbeck, Thilo C. G. Reusch, Toby Hallam, Steven R. Schofield, Neil J. Curson, Michelle Y. Simmons

Applied Physics Letters  ·  23 Jun 2014  ·  doi:10.1063/1.4884654

Interface and nanostructure evolution of cobalt germanides on Ge(001)

T. Grzela, W. Koczorowski, G. Capellini, R. Czajka, M. W. Radny, N. Curson, S. R. Schofield, M. A. Schubert, T. Schroeder

Journal of Applied Physics  ·  21 Feb 2014  ·  doi:10.1063/1.4865955

2013

Investigating individual arsenic dopant atoms in silicon using low-temperature scanning tunnelling microscopy

Kitiphat Sinthiptharakoon, Steven R Schofield, Philipp Studer, Veronika Brázdová, Cyrus F Hirjibehedin, David R Bowler, Neil J Curson

Journal of Physics: Condensed Matter  ·  04 Dec 2013  ·  doi:10.1088/0953-8984/26/1/012001

Magnetic anisotropy of single Mn acceptors in GaAs in an external magnetic field

M. Bozkurt, M. R. Mahani, P. Studer, J.-M. Tang, S. R. Schofield, …, M. E. Flatté, A. Yu. Silov, C. F. Hirjibehedin, C. M. Canali, P. M. Koenraad

Physical Review B  ·  12 Nov 2013  ·  doi:10.1103/PhysRevB.88.205203

Quantum engineering at the silicon surface using dangling bonds

S. R. Schofield, P. Studer, C. F. Hirjibehedin, N. J. Curson, G. Aeppli, D. R. Bowler

Nature Communications  ·  03 Apr 2013  ·  doi:10.1038/ncomms2679

This paper reports the unanticipated discovery of a new atomic-scale quantum dot state in silicon, created by atomic manipulation on a hydrogen-terminated surface, providing key insights into atomic-scale quantum dot behaviour.

Phenyl Attachment to Si(001) via STM Manipulation of Acetophenone

Steven R. Schofield, Oliver Warschkow, Daniel R. Belcher, K. Adam Rahnejat, Marian W. Radny, Philip V. Smith

The Journal of Physical Chemistry C  ·  07 Mar 2013  ·  doi:10.1021/jp311261r

Studying atomic scale structural and electronic properties of ion implanted silicon samples using cross-sectional scanning tunneling microscopy

Philipp Studer, Steven R. Schofield, Cyrus F. Hirjibehedin, Neil J. Curson

Applied Physics Letters  ·  07 Jan 2013  ·  doi:10.1063/1.4772508

2012

Site-Dependent Ambipolar Charge States Induced by Group V Atoms in a Silicon Surface

Philipp Studer, Veronika Brázdová, Steven R. Schofield, David R. Bowler, Cyrus F. Hirjibehedin, Neil J. Curson

ACS Nano  ·  27 Nov 2012  ·  doi:10.1021/nn3039484

Guided Self-Assembly of Metal Atoms on Silicon Using Organic-Molecule Templating

Daniel R. Belcher, Marian W. Radny, Steven R. Schofield, Phillip V. Smith, Oliver Warschkow

Journal of the American Chemical Society  ·  05 Sep 2012  ·  doi:10.1021/ja3026399

Slab Thickness Effects for the Clean and Adsorbed Ge(001) Surface with Comparison to Si(001)

G. Ali Shah, Marian W. Radny, Phillip V. Smith, Steven R. Schofield

The Journal of Physical Chemistry C  ·  08 Mar 2012  ·  doi:10.1021/jp208247m

2011

Charge density waves in the graphene sheets of the superconductor CaC6

K.C. Rahnejat, C.A. Howard, N.E. Shuttleworth, S.R. Schofield, K. Iwaya, C.F. Hirjibehedin, Ch. Renner, G. Aeppli, M. Ellerby

Nature Communications  ·  29 Nov 2011  ·  doi:10.1038/ncomms1574

Acetic acid on silicon (001): An exercise in chemical analogy

O. Warschkow, D. R. Belcher, M. W. Radny, S. R. Schofield, P. V. Smith

Physical Review B  ·  04 Oct 2011  ·  doi:10.1103/PhysRevB.84.153302

Model system for controlling strain in silicon at the atomic scale

Philipp Studer, Steven R. Schofield, Greg Lever, David R. Bowler, Cyrus F. Hirjibehedin, Neil J. Curson

Physical Review B  ·  22 Jul 2011  ·  doi:10.1103/PhysRevB.84.041306

Dimer pinning and the assignment of semiconductor–adsorbate surface structures

Phillip V. Smith, Oliver Warschkow, Marian W. Radny, Steven R. Schofield, Daniel R. Belcher

The Journal of Chemical Physics  ·  10 Feb 2011  ·  doi:10.1063/1.3551618

2010

Electronic effects of single H atoms on Ge(001) revisited

G. A. Shah, M. W. Radny, P. V. Smith, S. R. Schofield, N. J. Curson

The Journal of Chemical Physics  ·  07 Jul 2010  ·  doi:10.1063/1.3456736

Comment on “Transformation of C-type defects on surface at room temperature STM/STS study [Surf. Sci. 602 (2008) 2835]”

Oliver Warschkow, Nigel A. Marks, Steven R. Schofield, Marian W. Radny, Phillip V. Smith, David R. McKenzie

Surface Science  ·  01 Jan 2010  ·  doi:10.1016/j.susc.2009.10.028

2009

Radnyet al.Reply:

M. W. Radny, G. A. Shah, S. R. Schofield, P. V. Smith, N. J. Curson

Physical Review Letters  ·  30 Oct 2009  ·  doi:10.1103/PhysRevLett.103.189702

Carbonyl mediated attachment to silicon: Acetaldehyde on Si(001)

Daniel R. Belcher, Steven R. Schofield, Oliver Warschkow, Marian W. Radny, Phillip V. Smith

The Journal of Chemical Physics  ·  14 Sep 2009  ·  doi:10.1063/1.3224174

Acetone on silicon (001): ambiphilic molecule meets ambiphilic surface

Oliver Warschkow, Irene Gao, Steven R. Schofield, Daniel R. Belcher, Marian W. Radny, Sherin A. Saraireh, Phillip V. Smith

Physical Chemistry Chemical Physics  ·  01 Jan 2009  ·  doi:10.1039/b815542a

2008

Interaction of acetone with the Si(001) surface

S.A. Saraireh, P.V. Smith, M.W. Radny, S.R. Schofield, B.V. King

Surface Science  ·  01 Nov 2008  ·  doi:10.1016/j.susc.2008.08.027

Electronic effects induced by single hydrogen atoms on the Ge(001) surface

M. W. Radny, G. A. Shah, P. V. Smith, S. R. Schofield, N. J. Curson

The Journal of Chemical Physics  ·  24 Jun 2008  ·  doi:10.1063/1.2938091

Valence Surface Electronic States on Ge(001)

M. W. Radny, G. A. Shah, S. R. Schofield, P. V. Smith, N. J. Curson

Physical Review Letters  ·  20 Jun 2008  ·  doi:10.1103/PhysRevLett.100.246807

Water on silicon (001):Cdefects and initial steps of surface oxidation

O. Warschkow, S. R. Schofield, N. A. Marks, M. W. Radny, P. V. Smith, D. R. McKenzie

Physical Review B  ·  22 May 2008  ·  doi:10.1103/PhysRevB.77.201305

2007

Towards hybrid silicon-organic molecular electronics: The stability of acetone on the Si(001) surface

S.A. Saraireh, S.R. Schofield, P.V. Smith, M.W. Radny, B.V. King

Surface Science  ·  01 Dec 2007  ·  doi:10.1016/j.susc.2007.06.054

Single P and As dopants in the Si(001) surface

M. W. Radny, P. V. Smith, T. C. G. Reusch, O. Warschkow, N. A. Marks, H. Q. Shi, D. R. McKenzie, S. R. Schofield, N. J. Curson, M. Y. Simmons

The Journal of Chemical Physics  ·  13 Nov 2007  ·  doi:10.1063/1.2786991

Single hydrogen atoms on the Si(001) surface

M. W. Radny, P. V. Smith, T. C. G. Reusch, O. Warschkow, N. A. Marks, H. F. Wilson, S. R. Schofield, N. J. Curson, D. R. McKenzie, M. Y. Simmons

Physical Review B  ·  02 Oct 2007  ·  doi:10.1103/PhysRevB.76.155302

Organic Bonding to Silicon via a Carbonyl Group:  New Insights from Atomic-Scale Images

Steven R. Schofield, Sherin A. Saraireh, Phillip V. Smith, Marian W. Radny, Bruce V. King

Journal of the American Chemical Society  ·  24 Aug 2007  ·  doi:10.1021/ja0719069

2006

Thermal dissociation and desorption ofPH3on Si(001): A reinterpretation of spectroscopic data

H. F. Wilson, O. Warschkow, N. A. Marks, N. J. Curson, S. R. Schofield, T. C. G. Reusch, M. W. Radny, P. V. Smith, D. R. McKenzie, M. Y. Simmons

Physical Review B  ·  08 Nov 2006  ·  doi:10.1103/PhysRevB.74.195310

Importance of charging in atomic resolution scanning tunneling microscopy: Study of a single phosphorus atom in aSi(001)surface

M. W. Radny, P. V. Smith, T. C. G. Reusch, O. Warschkow, N. A. Marks, H. F. Wilson, N. J. Curson, S. R. Schofield, D. R. McKenzie, M. Y. Simmons

Physical Review B  ·  27 Sep 2006  ·  doi:10.1103/PhysRevB.74.113311

Phosphine Dissociation and Diffusion on Si(001) Observed at the Atomic Scale

Steven R. Schofield, Neil J. Curson, Oliver Warschkow, Nigel A. Marks, Hugh F. Wilson, Michelle Y. Simmons, Phillip V. Smith, Marian W. Radny, David R. McKenzie, Robert G. Clark

The Journal of Physical Chemistry B  ·  01 Feb 2006  ·  doi:10.1021/jp054646v

Phosphorus and hydrogen atoms on the (001) surface of silicon: A comparative scanning tunnelling microscopy study of surface species with a single dangling bond

T.C.G. Reusch, N.J. Curson, S.R. Schofield, T. Hallam, M.Y. Simmons

Surface Science  ·  01 Jan 2006  ·  doi:10.1016/j.susc.2005.10.031

2005

Observation of substitutional and interstitial phosphorus on cleanSi(100)−(2×1)with scanning tunneling microscopy

Geoffrey W. Brown, Blas P. Uberuaga, Holger Grube, Marilyn E. Hawley, Steven R. Schofield, Neil J. Curson, Michelle Y. Simmons, Robert G. Clark

Physical Review B  ·  14 Nov 2005  ·  doi:10.1103/PhysRevB.72.195323

Phosphine adsorption and dissociation on the Si(001) surface: Anab initiosurvey of structures

O. Warschkow, H. F. Wilson, N. A. Marks, S. R. Schofield, N. J. Curson, P. V. Smith, M. W. Radny, D. R. McKenzie, M. Y. Simmons

Physical Review B  ·  19 Sep 2005  ·  doi:10.1103/PhysRevB.72.125328

Scanning probe microscopy for silicon device fabrication

M.Y. Simmons, F.J. Ruess, K.E.J. Goh, T. Hallam, S.R. Schofield, …, N.J. Curson, A.R. Hamilton, M.J. Butcher, R.G. Clark, T.C.G. Reusch

Molecular Simulation  ·  01 May 2005  ·  doi:10.1080/08927020500035580

2004

Phosphine Dissociation on the Si(001) Surface

H. F. Wilson, O. Warschkow, N. A. Marks, S. R. Schofield, N. J. Curson, P. V. Smith, M. W. Radny, D. R. McKenzie, M. Y. Simmons

Physical Review Letters  ·  23 Nov 2004  ·  doi:10.1103/PhysRevLett.93.226102

Toward Atomic-Scale Device Fabrication in Silicon Using Scanning Probe Microscopy

Frank J. Ruess, Lars Oberbeck, Michelle Y. Simmons, Kuan Eng J. Goh, Alex R. Hamilton, Toby Hallam, Steven R. Schofield, Neil J. Curson, Robert G. Clark

Nano Letters  ·  28 Sep 2004  ·  doi:10.1021/nl048808v

STM characterization of the Si-P heterodimer

N. J. Curson, S. R. Schofield, M. Y. Simmons, L. Oberbeck, J. L. O’Brien, R. G. Clark

Physical Review B  ·  13 May 2004  ·  doi:10.1103/PhysRevB.69.195303

Split-off dimer defects on theSi(001)2×1surface

S. R. Schofield, N. J. Curson, J. L. O’Brien, M. Y. Simmons, R. G. Clark, N. A. Marks, H. F. Wilson, G. W. Brown, M. E. Hawley

Physical Review B  ·  19 Feb 2004  ·  doi:10.1103/PhysRevB.69.085312

2003

Atomically Precise Placement of Single Dopants in Si

S. R. Schofield, N. J. Curson, M. Y. Simmons, F. J. Rueß, T. Hallam, L. Oberbeck, R. G. Clark

Physical Review Letters  ·  25 Sep 2003  ·  doi:10.1103/PhysRevLett.91.136104

This seminal paper presents the first demonstration of atomically precise dopant placement in a semiconductor, laying the foundation for modern atomic-scale quantum electronic devices.

Progress in silicon-based quantum computing

R. G. Clark, R. Brenner, T. M. Buehler, V. Chan, N. J. Curson, …, M. Y. Simmons, F. E. Stanley, R. P. Starrett, C. Wellard, C. Yang

Philosophical Transactions of the Royal Society of London. Series A: Mathematical, Physical and Engineering Sciences  ·  15 Jul 2003  ·  doi:10.1098/rsta.2003.1221

Scanning tunneling microscopy imaging of charged defects on clean Si(100)-(2×1)

G. W. Brown, H. Grube, M. E. Hawley, S. R. Schofield, N. J. Curson, M. Y. Simmons, R. G. Clark

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  ·  01 Jul 2003  ·  doi:10.1116/1.1566973

Towards the atomic-scale fabrication of a silicon-based solid state quantum computer

Michelle Y. Simmons, Steven R. Schofield, Jeremy L. O’Brien, Neil J. Curson, Lars Oberbeck, T. Hallam, Robert G. Clark

Surface Science  ·  01 Jun 2003  ·  doi:10.1016/S0039-6028(03)00485-0

Critical issues in the formation of atomic arrays of phosphorus in silicon for the fabrication of a solid-state quantum computer

N.J. Curson, S.R. Schofield, M.Y. Simmons, L. Oberbeck, R.G. Clark

Surface Science  ·  01 Jun 2003  ·  doi:10.1016/S0039-6028(03)00206-1

Challenges in Surface Science for a P-in-Si Quantum Computer — Phosphine Adsorption/Incorporation and Epitaxial Si Encapsulation

Lars Oberbeck, Neil J. Curson, Steven R. Schofield, Toby Hallam, Michelle Y. Simmons, Robert G. Clark

Surface Review and Letters  ·  01 Apr 2003  ·  doi:10.1142/S0218625X03005098

2002

Encapsulation of phosphorus dopants in silicon for the fabrication of a quantum computer

L. Oberbeck, N. J. Curson, M. Y. Simmons, R. Brenner, A. R. Hamilton, S. R. Schofield, R. G. Clark

Applied Physics Letters  ·  21 Oct 2002  ·  doi:10.1063/1.1516859

Scanning tunnelling microscope fabrication of arrays of phosphorus atom qubits for a silicon quantum computer

J L O Brien, S R Schofield, M Y Simmons, R G Clark, A S Dzurak, N J Curson, B E Kane, N S McAlpine, M E Hawley, G W Brown

Smart Materials and Structures  ·  20 Sep 2002  ·  doi:10.1088/0964-1726/11/5/318

Imaging charged defects on clean Si(100)-(2×1) with scanning tunneling microscopy

G. W. Brown, H. Grube, M. E. Hawley, S. R. Schofield, N. J. Curson, M. Y. Simmons, R. G. Clark

Journal of Applied Physics  ·  15 Jul 2002  ·  doi:10.1063/1.1486047

2001

<title>Nanoscale phosphorous atom arrays created using STM for the fabricaton of a silicon-based quantum computer</title>

J. L. O’Brien, S. R. Schofield, M. Y. Simmons, Robert G. Clark, Andrew S. Dzurak, N. J. Curson, Bruce E. Kane, N. S. McAlpine, Marilyn E. Hawley, Geoffrey W. Brown

SPIE Proceedings  ·  19 Nov 2001  ·  doi:10.1117/12.454617

Towards the fabrication of phosphorus qubits for a silicon quantum computer

J. L. O’Brien, S. R. Schofield, M. Y. Simmons, R. G. Clark, A. S. Dzurak, N. J. Curson, B. E. Kane, N. S. McAlpine, M. E. Hawley, G. W. Brown

Physical Review B  ·  21 Sep 2001  ·  doi:10.1103/PhysRevB.64.161401

2000

Energetics of single- and double-layer steps on theSi(001)2×1surface calculated using the extended Brenner empirical potential

S. R. Schofield, M. W. Radny, P. V. Smith

Physical Review B  ·  15 Oct 2000  ·  doi:10.1103/PhysRevB.62.10199

The atomic fabrication of a silicon based quantum computer

M.Y. Simmons, S.R. Schofield, J.L. O’Brien, N.J. Curson, R.G. Clark, …, R.P. McKinnon, R. Brenner, D.J. Reilly, A.S. Dzurak, A.R. Hamilton

Proceedings of the 2001 1st IEEE Conference on Nanotechnology. IEEE-NANO 2001 (Cat. No.01EX516)  ·  [no date info]  ·  doi:10.1109/NANO.2001.966469

Minimisation of P surface segregation during epitaxial silicon growth for the fabrication of a silicon-based quantum computer

L. Oberbeck, N.J. Curson, T. Hallam, M.Y. Simmons, K.E.J. Goh, S.R. Schofield, F.J. Ruess, R.G. Clark

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)  ·  [no date info]  ·  doi:10.1109/COMMAD.2002.1237241