Research overview

Our group studies the quantum properties of matter at the atomic scale, with a focus on scanning tunnelling microscopy (STM), angle-resolved photoemission spectroscopy (ARPES), and the theory of defects and dopants in semiconductors and 2D materials.

This page will gradually collect short summaries of our main research themes together with selected talks and presentations.

Selected Research Topics

Quantum state imaging STM visualisation of dopant and defect wave functions in semiconductors and two-dimensional (2D) materials

Imaging the quantum states of single dopants and defects with atomic-resolution STM to uncover their symmetry, spatial extent, and electronic behaviour.

Hidden electronic structure How we uncover the electronic structure of hidden atomic-scale structures in semiconductors

We probe the electronic structure of quantum systems buried inside silicon by using soft X-ray ARPES to access their full three-dimensional band structure.

Atomic-scale semiconductor chemistry How molecules bond and react on semiconductor surfaces

We investigate how individual molecules adsorb, bond, and react on semiconductor surfaces using atomic-resolution STM combined with first-principles DFT modelling. This work underpins the development of atomically precise dopant incorporation in semiconductors and lays the foundation for atomic-scale electronic devices.

Research Presentations

Imaging and Understanding Quantum States in Semiconductors and 2D Materials Steven R. Schofield (Invited), 17 November 2025, Quantum Meets Nano Workshop, Institute of Physics, London, UK

A tour of atomic-scale fabrication with STM, real-space imaging of dopant and defect quantum states, and soft X-ray ARPES studies of buried interfaces and δ-doped layers.